Manufacturer Part Number
SI5935DC-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Array
Product Features and Performance
ROHS3 Compliant
8-SMD, Flat Lead Package
1206-8 ChipFET Package
TrenchFET Series
Tape & Reel (TR) Packaging
Operating Temperature: -55°C to 150°C
Power Rating: 1.1W
2 P-Channel (Dual) Configuration
Drain-Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 86mΩ @ 3A, 4.5V
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) Technology
Continuous Drain Current (Id): 3A @ 25°C
Logic Level Gate FET Feature
Gate Threshold Voltage (Vgs(th)): 1V @ 250μA
Gate Charge (Qg): 8.5nC @ 4.5V
Surface Mount Mounting Type
Product Advantages
Low on-resistance for improved efficiency
Logic level gate for easy driving
Compact 1206-8 ChipFET package
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 86mΩ @ 3A, 4.5V
Continuous Drain Current (Id): 3A @ 25°C
Gate Threshold Voltage (Vgs(th)): 1V @ 250μA
Gate Charge (Qg): 8.5nC @ 4.5V
Quality and Safety Features
ROHS3 Compliant
Compatibility
Compatible with a wide range of electronic systems and circuits
Application Areas
Suitable for various power management and control applications
Product Lifecycle
Currently available
No indication of discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Low on-resistance for improved efficiency
Logic level gate for easy driving
Compact 1206-8 ChipFET package
Wide operating temperature range
ROHS3 compliance for environmental safety