SI5935CDC-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI5935CDC-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

This is a dual P-channel MOSFET transistor in a surface-mount 1206-8 ChipFET package. It is part of Vishay's TrenchFET series.

Product Features and Performance

Dual P-channel MOSFET configuration

20V drain-source voltage rating

100mΩ maximum ON-resistance at 3.1A, 4.5V

4A continuous drain current at 25°C

455pF maximum input capacitance at 10V

1V maximum gate-source threshold voltage at 250μA

11nC maximum gate charge at 5V

Product Advantages

High power density in a compact surface-mount package

Low on-resistance for efficient power switching

Wide temperature range of -55°C to 150°C

Key Technical Parameters

Drain-Source Voltage (Vdss): 20V

ON-Resistance (Rds(on)): 100mΩ

Continuous Drain Current (Id): 4A

Input Capacitance (Ciss): 455pF

Gate-Source Threshold Voltage (Vgs(th)): 1V

Gate Charge (Qg): 11nC

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

This dual MOSFET is compatible with a wide range of electronic applications that require high-performance power switching.

Application Areas

Power management circuits

Motor control

Switching power supplies

Amplifier circuits

General-purpose power switching

Product Lifecycle

The SI5935CDC-T1-GE3 is an active and currently available product from Vishay. There are no known plans for discontinuation or replacement at this time.

Key Reasons to Choose This Product

High power density in a compact surface-mount package

Low on-resistance for efficient power switching

Wide operating temperature range of -55°C to 150°C

Dual P-channel MOSFET configuration for flexible design

RoHS3 compliance for use in a variety of applications