Manufacturer Part Number
SI5913DC-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor P-Channel MOSFET Transistor
Product Features and Performance
Low on-resistance
High current capability
Fast switching speed
Operating temperature range of -55°C to 150°C
Isolated Schottky diode
Product Advantages
Excellent performance in power switching applications
Compact size for space-constrained designs
Reliable operation in harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs): ±12V
On-resistance (Rds(on)): 84mΩ @ 3.7A, 10V
Continuous Drain Current (Id): 4A
Input Capacitance (Ciss): 330pF @ 10V
Power Dissipation: 1.7W (Ta), 3.1W (Tc)
Gate Charge (Qg): 12nC @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable performance in a wide temperature range
Compatibility
Suitable for a variety of power management and control applications
Application Areas
Power supplies
Motor drives
Switching regulators
Automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent performance in power switching applications
Compact size and reliable operation in harsh environments
Low on-resistance and high current capability
Fast switching speed and wide temperature range
RoHS3 compliance for safety and environmental considerations