SI5908DC-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI5908DC-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Dual N-Channel MOSFET Transistor

Product Features and Performance

2 N-Channel MOSFET in a single package

Operates at -55°C to 150°C junction temperature

Continuous drain current up to 4.4A

On-resistance as low as 40 mΩ

Logic level gate

Low gate charge of 7.5 nC

Product Advantages

Compact package size

Improved power handling and efficiency

Suitable for high-density and space-constrained applications

Excellent thermal management

Key Technical Parameters

Drain-to-Source Voltage (VDS): 20V

On-Resistance (RDS(on)): 40 mΩ @ 4.4A, 4.5V

Gate Threshold Voltage (VGS(th)): 1V @ 250 μA

Power Dissipation: 1.1W

Quality and Safety Features

RoHS3 compliant

Reliable performance in high-temperature environments

Compatibility

Compatible with various electronic circuit designs

Application Areas

Power management circuits

Motor controls

Switching power supplies

Industrial and consumer electronics

Product Lifecycle

No information on discontinuation or replacements

Key Reasons to Choose This Product

Compact and space-saving dual MOSFET design

Excellent thermal performance and high power handling

Low on-resistance and gate charge for improved efficiency

Suitable for a wide range of applications in industrial and consumer electronics