SI5853DDC-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI5853DDC-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

The SI5853DDC-T1-E3 is a P-Channel MOSFET transistor with a Schottky diode feature.

Product Features and Performance

Drain to Source Voltage (Vdss): 20 V

Vgs (Max): ±8V

Rds On (Max) @ Id, Vgs: 105mOhm @ 2.9A, 4.5V

Current Continuous Drain (Id) @ 25°C: 4A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V

Power Dissipation (Max): 1.3W (Ta), 3.1W (Tc)

Vgs(th) (Max) @ Id: 1V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 8 V

Product Advantages

Schottky diode feature

Wide operating temperature range of -55°C to 150°C

Low on-resistance

High current capability

Key Technical Parameters

MOSFET (Metal Oxide) technology

P-Channel FET type

8-SMD, Flat Lead package

1206-8 ChipFET package

Quality and Safety Features

RoHS3 compliant

Tape & Reel (TR) packaging

Compatibility

Can be used in a wide range of applications that require a P-Channel MOSFET transistor with Schottky diode feature.

Application Areas

Power management circuits

Switching circuits

Amplifier circuits

Motor control applications

Product Lifecycle

This product is currently available and not nearing discontinuation. Replacement or upgrade options may be available.

Several Key Reasons to Choose This Product

Schottky diode feature for improved switching performance

Wide operating temperature range suitable for harsh environments

Low on-resistance for efficient power handling

High current capability for demanding applications

Compact 1206-8 ChipFET package for space-constrained designs