SI5853DC-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI5853DC-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

This product is a discrete semiconductor device, specifically a single transistor - FET (Field-Effect Transistor), MOSFET (Metal-Oxide-Semiconductor FET) product.

Product Features and Performance

P-Channel MOSFET

Schottky Diode (Isolated)

Drain-to-Source Voltage (Vdss) of 20V

Maximum Gate-to-Source Voltage (Vgs) of ±8V

On-Resistance (Rds(on)) of 110mOhm @ 2.7A, 4.5V

Continuous Drain Current (Id) of 2.7A at 25°C

Maximum Power Dissipation (Pd) of 1.1W at 25°C

Gate Charge (Qg) of 7.7nC @ 4.5V

Operating Temperature Range of -55°C to 150°C

Product Advantages

Low on-resistance for efficient power switching

Isolated Schottky diode for fast switching

Compact 1206-8 ChipFET surface mount package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

Gate-to-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 110mOhm @ 2.7A, 4.5V

Continuous Drain Current (Id): 2.7A at 25°C

Power Dissipation (Pd): 1.1W at 25°C

Gate Charge (Qg): 7.7nC @ 4.5V

Quality and Safety Features

RoHS3 Compliant

Surface Mount 1206-8 ChipFET Package

Compatibility

This MOSFET is suitable for use in a wide range of power management, switching, and control applications.

Application Areas

Power Management Circuits

Switching Power Supplies

Motor Control

Lighting Control

Battery Charging

General Purpose Power Switching

Product Lifecycle

This product is an active and widely available part. Vishay/Siliconix continues to manufacture and support the SI5853 series, and there are no plans for discontinuation.

Several Key Reasons to Choose This Product

Low on-resistance for efficient power switching

Isolated Schottky diode for fast switching

Compact 1206-8 ChipFET surface mount package

Wide operating temperature range of -55°C to 150°C

Suitable for a variety of power management and control applications

Actively manufactured and supported by a reliable semiconductor supplier