Manufacturer Part Number
SI5475DDC-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
P-Channel MOSFET
12V Drain to Source Voltage (Vdss)
±8V Gate to Source Voltage (Vgs)
32mOhm Max Rds On @ 5.4A, 4.5V
6A Continuous Drain Current (Id) @ 25°C
1600pF Max Input Capacitance (Ciss) @ 6V
3W Power Dissipation (Max) @ Ta, 5.7W @ Tc
50nC Max Gate Charge (Qg) @ 8V
-55°C to 150°C Operating Temperature Range
Product Advantages
RoHS3 Compliant
Trench FET Technology
Surface Mount Packaging
Tape & Reel Packaging
Key Technical Parameters
Vdss: 12V
Vgs(Max): ±8V
Rds On (Max): 32mOhm @ 5.4A, 4.5V
Id (Continuous): 6A @ 25°C
Ciss (Max): 1600pF @ 6V
Power Dissipation (Max): 2.3W @ Ta, 5.7W @ Tc
Qg (Max): 50nC @ 8V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount
Tape & Reel Packaging
Application Areas
General Purpose P-Channel MOSFET Applications
Product Lifecycle
Current production, no discontinuation information available
Replacements and upgrades may be available from Vishay/Siliconix
Key Reasons to Choose This Product
Trench FET Technology for improved performance
Wide Operating Temperature Range (-55°C to 150°C)
Low Rds On for efficient power switching
High Drain Current Capability (6A Continuous)
RoHS3 Compliant for environmental compliance
Surface Mount and Tape & Reel packaging for easy integration