SI5475DC-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI5475DC-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

This product is a discrete semiconductor device, specifically a P-Channel MOSFET transistor.

Product Features and Performance

TrenchFET series

12V drain to source voltage

31mOhm maximum on-resistance at 5.5A and 4.5V

5A continuous drain current at 25°C

3W maximum power dissipation

-55°C to 150°C operating temperature range

29nC maximum gate charge at 4.5V

Product Advantages

Low on-resistance for efficient power switching

Wide operating temperature range

Compact surface mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 12V

Maximum Gate-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 31mOhm

Continuous Drain Current (Id): 5.5A

Power Dissipation (Ptot): 1.3W

Gate Threshold Voltage (Vgs(th)): 450mV

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for surface mount assembly

Compatibility

This MOSFET is compatible with a wide range of electronic circuits and power supply applications.

Application Areas

Power management circuits

Motor control

Switching power supplies

General-purpose power switching

Product Lifecycle

The SI5475 is an active product and currently available. No information on discontinuation or replacements.

Key Reasons to Choose This Product

Low on-resistance for efficient power switching

Wide operating temperature range suitable for harsh environments

Compact surface mount package for space-constrained designs

RoHS3 compliance for use in environmentally-conscious applications