Manufacturer Part Number
SI5475DC-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
This product is a discrete semiconductor device, specifically a P-Channel MOSFET transistor.
Product Features and Performance
TrenchFET series
12V drain to source voltage
31mOhm maximum on-resistance at 5.5A and 4.5V
5A continuous drain current at 25°C
3W maximum power dissipation
-55°C to 150°C operating temperature range
29nC maximum gate charge at 4.5V
Product Advantages
Low on-resistance for efficient power switching
Wide operating temperature range
Compact surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 12V
Maximum Gate-Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 31mOhm
Continuous Drain Current (Id): 5.5A
Power Dissipation (Ptot): 1.3W
Gate Threshold Voltage (Vgs(th)): 450mV
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for surface mount assembly
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and power supply applications.
Application Areas
Power management circuits
Motor control
Switching power supplies
General-purpose power switching
Product Lifecycle
The SI5475 is an active product and currently available. No information on discontinuation or replacements.
Key Reasons to Choose This Product
Low on-resistance for efficient power switching
Wide operating temperature range suitable for harsh environments
Compact surface mount package for space-constrained designs
RoHS3 compliance for use in environmentally-conscious applications
SI5465EDS-T1-E3Electro-Films (EFI) / Vishay