Manufacturer Part Number
SI4925BDY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
ROHS3 Compliant
Surface Mount
TrenchFET Series
Tape & Reel (TR) Packaging
Operating Temperature: -55°C ~ 150°C (TJ)
Power Max: 1.1W
Configuration: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 5.3A
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Product Advantages
ROHS3 Compliant
Surface Mount for space-saving design
TrenchFET technology for improved performance
Dual P-Channel configuration for flexibility
Key Technical Parameters
Operating Temperature: -55°C ~ 150°C
Power Rating: 1.1W
Drain to Source Voltage (Vdss): 30V
Rds On (Max): 25mOhm
Continuous Drain Current (Id): 5.3A
FET Gate Threshold Voltage (Vgs(th)): 3V
Gate Charge (Qg): 50nC
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount
Application Areas
General purpose power switching and control
Automotive electronics
Industrial equipment
Consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement and upgrade options may be available from Vishay/Siliconix or other manufacturers.
Key Reasons to Choose This Product
ROHS3 compliance for environmental responsibility
Surface mount package for space-saving design
TrenchFET technology for improved performance and efficiency
Dual P-Channel configuration provides design flexibility
Proven reliability and quality from Vishay/Siliconix
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