SI4925BDY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4925BDY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

The SI4925BDY-T1-E3 is a dual P-channel power MOSFET in a compact 8-SOIC surface-mount package.

Product Features and Performance

Trench MOSFET technology

Low on-resistance of 25 mΩ

Continuous drain current of 5.3 A

Logic-level gate drive

Operating temperature range of -55°C to 150°C

Product Advantages

Compact 8-SOIC package

High power handling capability

Low on-resistance for low power loss

Suitable for a wide range of applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30 V

Gate-to-Source Threshold Voltage (Vgs(th)): 3 V

Gate Charge (Qg): 50 nC

Power Dissipation: 1.1 W

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Designed for surface mount applications

Application Areas

Power management circuits

Motor control

Switching applications

Automotive electronics

Product Lifecycle

This product is currently in production and availability is good.

Key Reasons to Choose This Product

High power density in a compact package

Low on-resistance for efficient power conversion

Wide operating temperature range

Reliable Trench MOSFET technology

Suitable for high-volume, cost-sensitive applications