Manufacturer Part Number
SI4850EY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
60V Drain to Source Voltage
22 mOhm Rds On @ 6A, 10V
6A Continuous Drain Current @ 25°C
7W Power Dissipation (Max)
-55°C to 175°C Operating Temperature
Product Advantages
Trench MOSFET technology
Low on-resistance
High power density
Wide operating temperature range
Key Technical Parameters
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Quality and Safety Features
ROHS3 Compliant
8-SOIC (0.154", 3.90mm Width) Package
Compatibility
Surface Mount Mounting Type
Tape & Reel (TR) Packaging
Application Areas
Power management
Switching circuits
Motor control
Industrial automation
Product Lifecycle
Current product offering
Replacements and upgrades may be available
Key Reasons to Choose
Excellent performance with low on-resistance
Wide operating temperature range
Compact and efficient surface mount package
Compliant with environmental regulations
Suitable for a variety of power electronics applications