Manufacturer Part Number
SI4850EY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
60V Drain-Source Voltage
±20V Gate-Source Voltage
22mΩ On-Resistance @ 6A, 10V
6A Continuous Drain Current @ 25°C
7W Power Dissipation
3V Gate Threshold Voltage @ 250µA
5V/10V Drive Voltage (Max/Min On-Resistance)
27nC Gate Charge @ 10V
Product Advantages
Efficient power switching
Low on-resistance
Wide operating temperature range
Compact SOIC surface mount package
Key Technical Parameters
Drain-Source Voltage: 60V
Gate-Source Voltage: ±20V
On-Resistance: 22mΩ
Continuous Drain Current: 6A
Power Dissipation: 1.7W
Gate Threshold Voltage: 3V
Drive Voltage (Max/Min On-Resistance): 4.5V/10V
Gate Charge: 27nC
Quality and Safety Features
RoHS3 Compliant
Tape and Reel packaging
Compatibility
Surface mount SOIC package
Application Areas
Power management circuits
Motor drives
Switching power supplies
Electronic controls
Product Lifecycle
Current product, not nearing discontinuation
Replacement/upgrade options available from Vishay
Key Reasons to Choose
Efficient power switching performance
Low on-resistance for low power loss
Wide operating temperature range
Compact surface mount packaging
RoHS compliance for environmental safety