Manufacturer Part Number
SI4800BDY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
30V Drain to Source Voltage
5mΩ On-Resistance
5A Continuous Drain Current
3W Power Dissipation
Wide Operating Temperature Range (-55°C to 150°C)
Product Advantages
High efficiency and low power loss
Compact surface mount package
Suitable for high-frequency and high-power applications
Key Technical Parameters
Vdss: 30V
Vgs (Max): ±25V
Rds(on) (Max): 18.5mΩ @ 9A, 10V
Id (Continuous): 6.5A
Power Dissipation (Max): 1.3W
Vgs(th) (Max): 1.8V @ 250A
Gate Charge (Qg) (Max): 13nC @ 5V
Quality and Safety Features
RoHS3 Compliant
Tape and Reel packaging
Compatibility
Compatible with various electronic circuits and power conversion applications
Application Areas
Switching power supplies
Motor drives
Brushless DC (BLDC) motor control
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Efficient and low power operation
Compact surface mount package
Wide operating temperature range
Suitable for high-frequency and high-power applications
RoHS3 compliance for environmental safety
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