Manufacturer Part Number
SI4800BDY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET
Part of the TrenchFET product series
Product Features and Performance
Low on-resistance for efficient power switching
Fast switching speed for high-frequency applications
Robust and reliable design with trench-gate technology
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency
High-speed switching capability
Broad temperature tolerance
Compact surface-mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs) Max: ±25V
On-Resistance (Rds(on)) Max: 18.5mΩ @ 9A, 10V
Continuous Drain Current (Id) @ 25°C: 6.5A
Power Dissipation (Max): 1.3W
Quality and Safety Features
RoHS3 compliant
Tested for reliability and performance
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Product Lifecycle
This product is an active and in-production device
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency and switching performance
Wide operating temperature range for diverse applications
Compact and reliable surface-mount package
Robust and proven TrenchFET technology