Manufacturer Part Number
SI4686DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SI4686DY-T1-GE3 is a discrete semiconductor product, specifically a Transistor - FET, MOSFET - Single.
Product Features and Performance
N-Channel MOSFET
30V Drain to Source Voltage (Vdss)
5mOhm maximum On-Resistance (Rds(on)) at 13.8A, 10V
2A Continuous Drain Current (Id) at 25°C
1220pF maximum Input Capacitance (Ciss) at 15V
3W Power Dissipation (Max) at Ta, 5.2W at Tc
-55°C to 150°C Operating Temperature Range
Product Advantages
High efficiency and low power loss
Suitable for a wide range of applications
Reliable and durable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 9.5mOhm @ 13.8A, 10V
Threshold Voltage (Vgs(th)): 3V @ 250A
Drive Voltage Range: 4.5V (Max Rds(on)), 10V (Min Rds(on))
Gate Charge (Qg): 26nC @ 10V
Quality and Safety Features
RoHS3 compliant
8-SOIC (0.154", 3.90mm Width) package
Tape & Reel (TR) packaging
Compatibility
Suitable for a wide range of electronic applications
Application Areas
Power management
Motor control
Industrial and consumer electronics
Product Lifecycle
Current production model
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High efficiency and low power loss
Wide operating temperature range
Reliable and durable performance
Suitable for a variety of applications
Compact and surface-mountable package