Manufacturer Part Number
SI4686DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
This is a single N-channel TrenchFET MOSFET from Vishay Siliconix's SI4686 series.
Product Features and Performance
30V drain-source voltage (Vdss)
Maximum ±20V gate-source voltage (Vgs)
Low on-resistance of 9.5mOhm @ 13.8A, 10V
Continuous drain current of 18.2A at 25°C
Input capacitance of 1220pF @ 15V
3W power dissipation at 25°C, 5.2W at case temperature
Gate charge of 26nC @ 10V
Product Advantages
High efficiency due to low on-resistance
Suitable for high current applications
Compact 8-SOIC surface mount package
Key Technical Parameters
N-channel MOSFET
Threshold voltage (Vgs(th)) of 3V @ 250A
Drive voltage range of 4.5V to 10V
Operating temperature range of -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
Can be used as a replacement or upgrade for similar N-channel MOSFET devices.
Application Areas
Power management
Motor control
Switching power supplies
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and widely available. No discontinuation is planned.
Key Reasons to Choose This Product
Excellent performance and efficiency due to low on-resistance
Compact and easy to integrate 8-SOIC package
Wide operating temperature range suitable for industrial and automotive applications
RoHS3 compliance for environmental sustainability