Manufacturer Part Number
SI4630DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This product is a discrete semiconductor device, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
TrenchFET design for enhanced performance
Wide operating temperature range of -55°C to 150°C
High continuous drain current of 40A at 25°C
Low on-resistance (Rds(on)) of 2.7mΩ at 20A, 10V
High input capacitance of 6670pF at 15V
Maximum power dissipation of 3.5W at 25°C, 7.8W at the case
Product Advantages
Excellent efficiency and thermal management
Suitable for high-current, high-power applications
Compact surface-mount 8-SOIC package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 25V
Gate-to-Source Voltage (Vgs): ±16V
Threshold Voltage (Vgs(th)): 2.2V at 250A
Gate Charge (Qg): 161nC at 10V
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
This MOSFET is compatible with standard MOSFET driver circuits and can be used in a variety of power management and control applications.
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
General-purpose power switching
Product Lifecycle
This product is an active and widely used MOSFET in the Vishay/Siliconix portfolio. There are no immediate plans for discontinuation, and replacement options or upgrades may be available if needed.
Key Reasons to Choose This Product
Excellent performance characteristics, including high current capability, low on-resistance, and wide operating temperature range
Compact surface-mount package for efficient board layout
RoHS compliance for use in modern electronic designs
Broad compatibility and suitability for a wide range of power management and control applications