Manufacturer Part Number
SI4628DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Product Features and Performance
N-Channel MOSFET
30V Drain to Source Voltage
±20V Gate to Source Voltage
3mOhm Max On-Resistance @ 20A, 10V
38A Continuous Drain Current @ 25°C
3450pF Max Input Capacitance @ 15V
87nC Max Gate Charge @ 10V
-55°C to 150°C Operating Temperature Range
Product Advantages
Low On-Resistance for Efficient Power Switching
High Current Handling Capability
Wide Operating Temperature Range
Tape and Reel Packaging for Automated Assembly
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs Max): ±20V
On-Resistance (Rds On Max): 3mOhm @ 20A, 10V
Drain Current (Id Continuous @ 25°C): 38A
Input Capacitance (Ciss Max @ 15V): 3450pF
Gate Charge (Qg Max @ 10V): 87nC
Quality and Safety Features
RoHS3 Compliant
8-SOIC Packaging for Surface Mount
Compatibility
Compatible with SkyFET and TrenchFET Series
Application Areas
Power Switching
Motor Drives
Power Supplies
Inverters
Industrial Electronics
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available within the SkyFET and TrenchFET series
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
High current handling capability for demanding applications
Wide operating temperature range for reliable performance
Tape and reel packaging for automated assembly
RoHS compliance for environmental sustainability