SI4559ADY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4559ADY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI4559ADY-T1-GE3 is a high-performance N-Channel and P-Channel MOSFET array device from Vishay Siliconix. It is designed for a wide range of power management and control applications.

Product Features and Performance

N-Channel and P-Channel MOSFET configuration

60V Drain-to-Source Voltage

Low On-Resistance of 58mΩ at 4.3A, 10V

High Continuous Drain Current of 5.3A (N-Channel) and 3.9A (P-Channel)

Fast Switching Capabilities

Low Input Capacitance of 665pF at 15V

Logic Level Gate

Operating Temperature Range of -55°C to 150°C

Product Advantages

Efficient power management and control

Compact surface mount package

Reliable and robust performance

Suitable for a wide range of applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

On-Resistance (Rds(on)): 58mΩ @ 4.3A, 10V

Continuous Drain Current (Id): 5.3A (N-Channel), 3.9A (P-Channel)

Input Capacitance (Ciss): 665pF @ 15V

Gate Threshold Voltage (Vgs(th)): 3V @ 250μA

Gate Charge (Qg): 20nC @ 10V

Quality and Safety Features

RoHS3 Compliant

Tape and Reel packaging for efficient handling and assembly

Compatibility

Compatible with a wide range of power management and control applications

Application Areas

Power management circuits

Motor control

Lighting control

General purpose power switching

Product Lifecycle

The SI4559ADY-T1-GE3 is an active product and is not nearing discontinuation.

Replacement or upgrade options may be available from Vishay Siliconix.

Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance, high current capability, and fast switching

Compact surface mount package for space-efficient designs

Wide operating temperature range for versatile applications

Reliable and robust design for long-term reliability

RoHS3 compliance for environmental friendliness