Manufacturer Part Number
SI4559ADY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Arrays
Product Features and Performance
N and P-Channel Configuration
MOSFET (Metal Oxide) Technology
Logic Level Gate
Drain to Source Voltage (Vdss) of 60V
Rds On (Max) of 58mOhm @ 4.3A, 10V
Current Continuous Drain (Id) of 5.3A, 3.9A
Input Capacitance (Ciss) (Max) of 665pF @ 15V
Gate Charge (Qg) (Max) of 20nC @ 10V
Product Advantages
High performance
Efficient power handling
Suitable for a wide range of applications
Key Technical Parameters
Package: 8-SOIC (0.154", 3.90mm Width)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Max: 3.1W, 3.4W
Vgs(th) (Max) of 3V @ 250A
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting Type
Application Areas
Wide range of applications requiring efficient power handling
Product Lifecycle
Active product
Replacement or upgrade options available
Key Reasons to Choose This Product
High performance and efficiency
Suitable for a wide range of applications
Reliable and RoHS-compliant
Availability of replacement or upgrade options