SI4477DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4477DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI4477DY-T1-GE3 is a high-performance, low on-resistance P-channel power MOSFET from Vishay Siliconix. It is suitable for use in a variety of power management and control applications.

Product Features and Performance

Offers low on-resistance of 6.2 mΩ @ 18 A, 4.5 V

Capable of handling continuous drain current of 26.6 A at 25°C case temperature

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 4600 pF @ 10 V

Maximum power dissipation of 3 W at 25°C ambient temperature, or 6.6 W at 25°C case temperature

Product Advantages

Excellent power efficiency due to low on-resistance

Robust design with high temperature capability

Suitable for high-current, high-power applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20 V

Gate-to-Source Voltage (Vgs): ±12 V

Threshold Voltage (Vgs(th)): 1.5 V @ 250 A

Gate Charge (Qg): 190 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

8-SOIC package for surface mount assembly

Compatibility

Can be used as a replacement or upgrade for similar P-channel power MOSFET devices.

Application Areas

Power management circuits

Motor control

Switching power supplies

Automotive electronics

Product Lifecycle

The SI4477DY-T1-GE3 is an active product, and Vishay Siliconix continues to manufacture and support it. Replacement or upgrade options may be available for future design needs.

Key Reasons to Choose This Product

Excellent power efficiency and low on-resistance

Robust design with high temperature capability

Suitable for high-current, high-power applications

RoHS3 compliant for environmental responsibility

Wide availability and ongoing manufacturer support