Manufacturer Part Number
SI4472DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
150V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs Max)
45mOhm Drain-Source On-Resistance (Rds On) at 5A, 10V
7A Continuous Drain Current (Id) at 25°C
1735pF Input Capacitance (Ciss) at 50V
1W Power Dissipation at 25°C (Ta), 5.9W at Case Temperature (Tc)
43nC Gate Charge (Qg) at 10V
Product Advantages
Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
N-Channel FET Type
5V Gate-Source Threshold Voltage (Vgs(th)) at 250A
8V to 10V Drive Voltage Range for Minimum/Maximum Rds On
Surface Mount Mounting Type
Quality and Safety Features
RoHS3 Compliant
8-SOIC (0.154", 3.90mm Width) Packaging
Compatibility
Suitable for a wide range of power switching and control applications
Application Areas
Power supplies, motor drives, industrial controls, and other power management systems
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from Vishay/Siliconix
Key Reasons to Choose This Product
Excellent voltage and current handling capabilities
Very low on-resistance for efficient power switching
Wide operating temperature range for reliability
Surface mount packaging for easy integration
RoHS3 compliance for environmental responsibility