Manufacturer Part Number
SI4431BDY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
30V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
30mOhm On-Resistance (Rds On) @ 7.5A, 10V
7A Continuous Drain Current (Id) @ 25°C
5W Power Dissipation (Max) @ 25°C
20nC Gate Charge (Qg) @ 5V
Product Advantages
Low On-Resistance for improved efficiency
High current handling capability
Wide temperature range (-55°C to 150°C)
Suitable for high power switching applications
Key Technical Parameters
MOSFET Technology
8-SOIC Package
Tape & Reel Packaging
-55°C to 150°C Operating Temperature
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting
Application Areas
Power management
Motor control
Switching power supplies
Industrial and consumer electronics
Product Lifecycle
Current production status, no information on discontinuation
Key Reasons to Choose
Low On-Resistance for high efficiency
High current handling capability
Wide operating temperature range
Suitable for high power switching applications