Manufacturer Part Number
SI4431BDY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel power MOSFET in a compact 8-SOIC package
Product Features and Performance
Very low on-resistance for high efficiency
Fast switching for high-frequency applications
Rugged and reliable design
Withstands up to 30V drain-to-source voltage
Continuous drain current up to 5.7A
Product Advantages
Compact 8-SOIC package
Excellent thermal performance
High power density
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 30mΩ @ 7.5A, 10V
Continuous Drain Current (Id): 5.7A
Power Dissipation (Pd): 1.5W
Gate Charge (Qg): 20nC @ 5V
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable and rugged design
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Battery chargers
Industrial controls
Product Lifecycle
This product is an active and current offering from Vishay/Siliconix. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Excellent power efficiency with very low on-resistance
Compact 8-SOIC package for space-constrained designs
Wide operating temperature range for harsh environments
Reliable and robust design for long-term performance
Suitable for high-frequency switching applications