Manufacturer Part Number
SI4425BDY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
P-channel enhancement-mode TrenchFET MOSFET
Optimized for power management and control applications
Product Features and Performance
Low on-resistance of 12 mΩ
High current capability of 8.8 A
Fast switching speed
Low input capacitance and gate charge
Product Advantages
Excellent power efficiency
Compact surface mount package
Superior thermal performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Gate-to-Source Voltage (Vgs): ±20 V
Continuous Drain Current (Id): 8.8 A
On-Resistance (Rds(on)): 12 mΩ
Power Dissipation (Pd): 1.5 W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation (-55°C to 150°C)
Compatibility
Compatible with various power management and control applications
Application Areas
Power supplies
Motor drives
Switching regulators
Battery chargers
Industrial controls
Product Lifecycle
This product is currently in production and widely available.
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
High current capability and low on-resistance
Compact surface mount package
Proven reliability and long-term availability