Manufacturer Part Number
SI4423DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
ROHS3 Compliant
8-SOIC (0.154", 3.90mm Width) package
TrenchFET series
Tape & Reel (TR) packaging
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 4.5V
MOSFET (Metal Oxide) technology
Current Continuous Drain (Id) @ 25°C: 10A (Ta)
Power Dissipation (Max): 1.5W (Ta)
P-Channel FET Type
Vgs(th) (Max) @ Id: 900mV @ 600A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 5 V
Surface Mount Mounting Type
Product Advantages
ROHS3 compliant
Compact 8-SOIC package
Wide operating temperature range
High drain-source voltage
Low on-resistance
High continuous drain current
Low gate charge
Suitable for surface mount applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 4.5V
Current Continuous Drain (Id) @ 25°C: 10A (Ta)
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 600A
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 5 V
Quality and Safety Features
ROHS3 compliant
Compatibility
Suitable for a wide range of electronic applications that require a P-Channel MOSFET
Application Areas
Broadly applicable in various electronic circuits and systems that require a P-Channel MOSFET
Product Lifecycle
Currently available, no information on discontinuation
Key Reasons to Choose This Product
ROHS3 compliance for environmentally friendly applications
Compact 8-SOIC package for space-constrained designs
Wide operating temperature range for versatile usage
High drain-source voltage and low on-resistance for efficient power handling
High continuous drain current for high-power applications
Low gate charge for fast switching and energy-efficient operation
Surface mount design for convenient PCB integration