Manufacturer Part Number
SI4401BDY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
ROHS3 Compliant
8-SOIC (0.154", 3.90mm Width) package
TrenchFET Series
Tape & Reel (TR) packaging
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Power Dissipation (Max): 1.5W (Ta)
P-Channel FET Type
Vgs(th) (Max) @ Id: 3V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V
Surface Mount Mounting Type
Product Advantages
High efficiency and low on-resistance
Wide operating temperature range
Compact and space-saving package
Key Technical Parameters
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Current Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount packaging
Application Areas
Suitable for a variety of power management and switching applications
Product Lifecycle
Current product, no signs of discontinuation
Replacements and upgrades available
Several Key Reasons to Choose This Product
High efficiency and low on-resistance for improved power handling
Wide operating temperature range for versatile applications
Compact and space-saving 8-SOIC package for dense designs
ROHS3 compliance for environmentally-friendly use
Availability of replacements and upgrades for long-term support