Manufacturer Part Number
SI4396DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel MOSFET transistor with trench technology
Product Features and Performance
Low on-resistance (RDS(on)) of 11.5 mΩ
High current capability of 16A continuous drain current
High switching speed and low gate charge
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1675 pF
Product Advantages
Excellent power efficiency due to low on-resistance
High power density and compact size
Reliable performance over a wide temperature range
Suitable for high-frequency and high-current switching applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30V
Gate-to-Source Voltage (VGS): ±20V
Continuous Drain Current (ID): 16A
On-Resistance (RDS(on)): 11.5 mΩ
Input Capacitance (Ciss): 1675 pF
Power Dissipation (PD): 3.1W (Ta), 5.4W (Tc)
Quality and Safety Features
RoHS3 compliant
ESD protection
Compatibility
Compatible with various high-frequency and high-current switching applications
Application Areas
Power supplies
DC-DC converters
Motor drives
LED lighting
Industrial and consumer electronics
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
High current capability and fast switching speed
Wide operating temperature range for reliable performance
Compact size and high power density
RoHS compliance for use in various applications
Si4394DY-T1-E3Electro-Films (EFI) / Vishay
SI4392DYVIS