Manufacturer Part Number
SI4346DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single N-Channel Transistor MOSFET
Product Features and Performance
Trench MOSFET technology
30V Drain-Source Voltage
23mΩ maximum On-Resistance
9A continuous Drain Current
31W maximum Power Dissipation
-55°C to 150°C operating temperature range
Product Advantages
Low On-Resistance for efficient switching
High current handling capability
Wide operating temperature range
Suitable for various power conversion applications
Key Technical Parameters
Drain-Source Voltage: 30V
Gate-Source Voltage: ±12V
On-Resistance: 23mΩ max @ 8A, 10V
Drain Current: 5.9A continuous
Power Dissipation: 1.31W max
Threshold Voltage: 2V max @ 250μA
Quality and Safety Features
RoHS3 compliant
Surface mount package (8-SOIC)
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Switching circuits
Inverters
Converters
Product Lifecycle
Current product offering
Replacement or upgrade options available
Key Reasons to Choose
Efficient power switching performance
High current handling capability
Wide operating temperature range
Compact surface mount package
Compliance with RoHS3 standards