Manufacturer Part Number
SI4336DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
N-channel MOSFET transistor
Product Features and Performance
Drain to Source Voltage (Vdss): 30V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 25A, 10V
Current Continuous Drain (Id) @ 25°C: 17A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Product Advantages
Low on-resistance
High current capability
Fast switching speed
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Manufacturer's packaging: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Application Areas
Suitable for a wide range of power electronics and switching applications
Product Lifecycle
Current product, no indication of discontinuation
Several Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance, high current capability, and fast switching speed
Compact surface mount package
RoHS3 compliance for environmental and safety considerations
Broad compatibility and suitability for a wide range of power electronics applications