SI4214DDY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4214DDY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Dual N-Channel TrenchFET MOSFET

Product Features and Performance

30V Drain to Source Voltage (Vdss)

5mOhm Maximum Rds(on) at 8A, 10V

5A Continuous Drain Current (Id) at 25°C

660pF Maximum Input Capacitance (Ciss) at 15V

5V Maximum Gate-to-Source Threshold Voltage (Vgs(th)) at 250uA

22nC Maximum Gate Charge (Qg) at 10V

Product Advantages

Efficient power switching

Low on-resistance

Fast switching speed

Logic level gate drive

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

Configuration: 2 N-Channel (Dual)

Package: 8-SOIC (0.154", 3.90mm Width)

Operating Temperature: -55°C to 150°C (TJ)

Power Rating: 3.1W

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount

Application Areas

Power supplies

Motor controls

Switching circuits

Industrial electronics

Product Lifecycle

Currently available, no known discontinuation or replacement plans

Key Reasons to Choose This Product

Efficient power switching performance

Low on-resistance for reduced power loss

Fast switching speed for high-frequency applications

Logic level gate drive for easy interfacing

Surface mount package for compact designs

Wide operating temperature range