SI4210DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4210DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Vishay Siliconix SI4210DY-T1-GE3 is a dual N-channel MOSFET transistor designed for power management and switching applications.

Product Features and Performance

Trench MOSFET technology for high efficiency and low on-resistance

Dual N-channel configuration in a single package

Low on-resistance of 35.5 mΩ at 5 A, 10 V

High continuous drain current of 6.5 A at 25°C

Wide operating temperature range of -55°C to 150°C

Product Advantages

Efficient power management and switching

Small and space-saving 8-SOIC package

Suitable for various power conversion and control applications

Key Technical Parameters

Drain-source voltage (Vdss): 30 V

Gate-source threshold voltage (Vgs(th)): 2.5 V at 250 μA

Input capacitance (Ciss): 445 pF at 15 V

Gate charge (Qg): 12 nC at 10 V

Quality and Safety Features

RoHS-3 compliant

Provides reliable performance and safety in various applications

Compatibility

Suitable for a wide range of power management and switching applications

Application Areas

Power supplies

Motor drivers

Battery chargers

General-purpose power switching

Product Lifecycle

Currently in active production

Replacement or upgrade options may be available in the future as technology evolves

Key Reasons to Choose This Product

Efficient power handling and low on-resistance

Compact and space-saving 8-SOIC package

Wide operating temperature range

Reliable performance and safety features

Suitability for a variety of power management and switching applications