Manufacturer Part Number
SI4116DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
N-channel enhancement-mode field-effect transistor (FET)
Designed for power switching and amplifier applications
Product Features and Performance
Low on-resistance
Fast switching speed
High current handling capability
Low gate charge
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Optimized for high-efficiency power conversion
Suitable for various power management applications
Reliable and robust performance
Key Technical Parameters
Drain-to-Source Voltage (VDS): 25V
Gate-to-Source Voltage (VGS): ±12V
On-Resistance (RDS(on)): 8.6mΩ @ 10A, 10V
Continuous Drain Current (ID): 18A @ 25°C
Input Capacitance (Ciss): 1925pF @ 15V
Power Dissipation (PD): 2.5W (Ta), 5W (Tc)
Quality and Safety Features
RoHS3 compliant
Meets industry-standard reliability and safety requirements
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Battery chargers
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and has no known plans for discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High efficiency and low power loss due to low on-resistance
Fast switching capabilities for improved system performance
Robust design and wide operating temperature range for reliable operation
Versatile compatibility for various power management applications
Compliance with industry safety and environmental standards