SI4114DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4114DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-Channel TrenchFET MOSFET with low on-resistance and fast switching speed.

Product Features and Performance

Ultra-low on-resistance of 6 mΩ at 10 A, 10 V

High continuous drain current of 20 A at 25°C

Fast switching speed with low gate charge of 95 nC at 10 V

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 3700 pF at 10 V

High power dissipation of 2.5 W at Ta and 5.7 W at Tc

Product Advantages

Excellent efficiency and thermal performance

Reliable and durable design

Suitable for high-power switching applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20 V

Gate-to-Source Voltage (Vgs): ±16 V

Threshold Voltage (Vgs(th)): 2.1 V at 250 μA

Drive Voltage (Max Rds On, Min Rds On): 4.5 V, 10 V

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount assembly

Compatibility

Suitable for a wide range of high-power switching applications

Application Areas

Power supplies

Motor drives

Inverters

Converters

Automotive electronics

Product Lifecycle

Current product, no discontinuation plans

Replacements and upgrades available

Key Reasons to Choose This Product

Excellent efficiency and thermal performance

Reliable and durable design

Suitable for a wide range of high-power switching applications

Ease of integration and compatibility

Availability of replacements and upgrades