SI3900DV-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI3900DV-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

ROHS3 Compliant

Surface Mount Mounting Type

SOT-23-6 Thin, TSOT-23-6 Package

TrenchFET Series

Tape & Reel (TR) Package

Operating Temperature: -55°C ~ 150°C (TJ)

Power Max: 830mW

2 N-Channel (Dual) Configuration

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V

MOSFET (Metal Oxide) Technology

Current Continuous Drain (Id) @ 25°C: 2A

Logic Level Gate FET Feature

Vgs(th) (Max) @ Id: 1.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V

Product Advantages

High power density

Low on-resistance

Logic-level gate drive

Compact surface-mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V

Continuous Drain Current (Id) @ 25°C: 2A

Vgs(th) (Max) @ Id: 1.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V

Quality and Safety Features

ROHS3 Compliant

Compatibility

Surface Mount

Application Areas

General purpose power switching and amplification applications

Product Lifecycle

Currently in production

Replacements and upgrades available

Key Reasons to Choose

High power density

Low on-resistance

Logic-level gate drive

Compact surface-mount package

Proven reliability and performance