SI3900DV-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI3900DV-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Products

Transistors FETs, MOSFETs Arrays

Product Features and Performance

ROHS3 Compliant

Manufacturer's packaging: 6-TSOP

Base Product Number: SI3900

Package / Case: SOT-23-6 Thin, TSOT-23-6

Supplier Device Package: 6-TSOP

Series: TrenchFET

Package: Tape & Reel (TR)

Operating Temperature: -55°C ~ 150°C (TJ)

Power Max: 830mW

Configuration: 2 N-Channel (Dual)

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V

Technology: MOSFET (Metal Oxide)

Current Continuous Drain (Id) @ 25°C: 2A

FET Feature: Logic Level Gate

Vgs(th) (Max) @ Id: 1.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V

Mounting Type: Surface Mount

Product Advantages

High performance MOSFET

Low on-resistance

Logic level gate

Suitable for high power switching applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V

Current Continuous Drain (Id) @ 25°C: 2A

Vgs(th) (Max) @ Id: 1.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V

Quality and Safety Features

ROHS3 Compliant

Compatibility

Surface mount package

Suitable for high power switching applications

Application Areas

Power supplies

Motor drives

Switching circuits

Product Lifecycle

Available and not nearing discontinuation

Replacement and upgrade options available

Key Reasons to Choose This Product

High performance MOSFET with low on-resistance

Logic level gate for easy drive

Suitable for high power switching applications

Surface mount package for easy integration

ROHS3 compliant for environmental safety