SI3457CDV-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI3457CDV-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI3457CDV-T1-GE3 is a discrete P-channel MOSFET transistor product from Vishay/Siliconix.

Product Features and Performance

P-channel MOSFET transistor

Operates in the temperature range of -55°C to 150°C

Drain-to-source voltage up to 30V

Gate-to-source voltage up to ±20V

On-resistance as low as 74mOhm @ 4.1A, 10V

Continuous drain current up to 5.1A

Input capacitance up to 450pF

Power dissipation up to 2W (Ta) or 3W (Tc)

Gate charge up to 15nC @ 10V

Product Advantages

Efficient power management with low on-resistance

Wide operating temperature range

Compact surface mount package

Key Technical Parameters

Drain-to-source voltage: 30V

Gate-to-source voltage: ±20V

On-resistance: 74mOhm

Continuous drain current: 5.1A

Input capacitance: 450pF

Power dissipation: 2W (Ta), 3W (Tc)

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Surface mount SOT-23-6 Thin, TSOT-23-6 package

Application Areas

Power management circuits

Switch-mode power supplies

Motor control

Battery charging and protection circuits

Product Lifecycle

Currently in production

No known discontinuation or replacement plans

Key Reasons to Choose This Product

Excellent power efficiency with low on-resistance

Wide operating temperature range for versatile applications

Compact surface mount package for space-constrained designs

Reliable performance and RoHS3 compliance for high-quality applications