SI3457BDV-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI3457BDV-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Single P-Channel Enhancement Mode Field Effect Transistor (FET)

Product Features and Performance

Trench MOSFET technology

Low on-resistance (Rds(on)) of 54 mΩ at 5 A, 10 V

Continuous drain current (Id) of 3.7 A at 25°C

Wide operating temperature range of -55°C to 150°C

Fast switching speed

Low gate charge (Qg) of 19 nC at 10 V

Product Advantages

Efficient power conversion

Reliable performance

Wide range of applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Gate to Source Voltage (Vgs): ±20 V

Power Dissipation (Max): 1.14 W at 25°C

Gate Threshold Voltage (Vgs(th)): 3 V at 250 μA

Quality and Safety Features

RoHS3 compliant

Suitable for industrial, automotive, and consumer applications

Compatibility

Compatible with various electronic circuits and systems that require a high-performance P-Channel MOSFET

Application Areas

Power management circuits

Motor control

Switching power supplies

Automotive electronics

Industrial equipment

Product Lifecycle

This product is an active and widely used part in the Vishay / Siliconix portfolio.

Replacements and upgrades are readily available.

Key Reasons to Choose This Product

Excellent power efficiency and low on-resistance

Wide operating temperature range for reliable performance

Fast switching speed for high-frequency applications

Compact and space-saving surface-mount package

Robust and RoHS-compliant design for various industries