SI3456DDV-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI3456DDV-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistor FET, MOSFET Single

Product Features and Performance

N-Channel MOSFET

30V Drain to Source Voltage

±20V Gate to Source Voltage

40mΩ Max On-Resistance @ 5A, 10V

3A Continuous Drain Current @ 25°C

325pF Max Input Capacitance @ 15V

7W Max Power Dissipation @ Ta, 2.7W @ Tc

-55°C to 150°C Operating Temperature

Product Advantages

RoHS3 Compliant

Efficient Power Conversion

High Reliability

Compact SOT-23-6 Thin Package

Key Technical Parameters

Vdss: 30V

Vgs(Max): ±20V

Rds(on)(Max): 40mΩ @ 5A, 10V

Id(Cont): 6.3A @ 25°C

Ciss(Max): 325pF @ 15V

Pd(Max): 1.7W @ Ta, 2.7W @ Tc

Vgs(th)(Max): 3V @ 250μA

Quality and Safety Features

RoHS3 Compliant

Designed for High Reliability

Compatibility

Surface Mount Package

Tape & Reel Packaging

Application Areas

Power Conversion

Motor Control

Switching Power Supplies

Battery Chargers

Product Lifecycle

Current Product

Replacements and Upgrades Available

Key Reasons to Choose This Product

High Performance N-Channel MOSFET

Efficient Power Conversion

Compact and Reliable Package

Wide Temperature Range Operation

RoHS3 Compliant