SI3456BDV-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI3456BDV-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Vishay / Siliconix SI3456BDV-T1-GE3 is a high-performance N-Channel TrenchFET MOSFET transistor.

Product Features and Performance

N-Channel MOSFET

Drain-Source Voltage (Vdss) of 30 V

Maximum Gate-Source Voltage (Vgs) of ±20 V

On-Resistance (Rds(on)) of 35 mOhm @ 6 A, 10 V

Continuous Drain Current (Id) of 4.5 A at 25°C

Power Dissipation (Ptot) of 1.1 W at 25°C

Gate Charge (Qg) of 13 nC @ 10 V

Operating Temperature Range of -55°C to 150°C

Product Advantages

Low on-resistance for improved efficiency

High-speed switching for power conversion applications

Compact SOT-23-6 Thin, TSOT-23-6 package

RoHS3 compliant

Key Technical Parameters

Drain-Source Voltage (Vdss): 30 V

Maximum Gate-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 35 mOhm @ 6 A, 10 V

Continuous Drain Current (Id): 4.5 A at 25°C

Power Dissipation (Ptot): 1.1 W at 25°C

Gate Charge (Qg): 13 nC @ 10 V

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Meets environmental and safety standards

Compatibility

Can be used in a wide range of power electronics applications

Application Areas

Power conversion

Motor control

Telecommunications equipment

Industrial electronics

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacement or upgraded products may be available in the future as technology advances.

Key Reasons to Choose This Product

High efficiency due to low on-resistance

Fast switching for improved power conversion performance

Compact and space-saving package

Wide operating temperature range

Reliable and RoHS3 compliant