Manufacturer Part Number
SI3442BDV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Single N-Channel TrenchFET® MOSFET in a space-saving SOT-23-6 package
Product Features and Performance
20V drain-to-source voltage
Low on-resistance of 57mΩ at 4A, 4.5V
3A continuous drain current at 25°C
Low input capacitance of 295pF at 10V
860mW maximum power dissipation
Fast switching speed
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact size for space-constrained designs
High efficiency and low power loss
Reliable performance in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 57mΩ @ 4A, 4.5V
Drain Current (Id): 3A @ 25°C
Input Capacitance (Ciss): 295pF @ 10V
Power Dissipation (Pd): 860mW
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for use in a variety of electronic circuits and applications
Application Areas
Power management circuits
Switch-mode power supplies
Motor drives
Battery-powered devices
Product Lifecycle
Current product offering, no indication of discontinuation
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose This Product
Compact size and high power density for space-constrained designs
Low on-resistance and fast switching for efficient power conversion
Reliable performance in a wide temperature range
Compliance with RoHS regulations for environmentally-conscious applications