Manufacturer Part Number
SI3442BDV-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Power Semiconductor Device
Product Features and Performance
Trench MOSFET Technology
Low On-Resistance
High Power Density
Fast Switching Speed
High Reliability
Product Advantages
Excellent power handling capability
Efficient power conversion
Compact design
Key Technical Parameters
Drain-Source Voltage (Vds): 20V
Gate-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 57mΩ @ 4A, 4.5V
Drain Current (Id): 3A (Ta)
Input Capacitance (Ciss): 295pF @ 10V
Power Dissipation (Pd): 860mW (Ta)
Quality and Safety Features
ROHS3 Compliant
Suitable for harsh environments (-55°C to 150°C)
Compatibility
Surface Mount (SOT-23-6 Thin, TSOT-23-6)
Tape & Reel Packaging
Application Areas
Power Supplies
Motor Drives
DC/DC Converters
Switching Regulators
Telecommunications Equipment
Product Lifecycle
Current production status, no known discontinuation
Several Key Reasons to Choose This Product
Excellent power handling and efficiency
Compact and reliable design
Wide operating temperature range
Compatibility with common surface mount packaging
Suitable for a variety of power electronics applications