Manufacturer Part Number
SI2306BDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
N-Channel MOSFET
Trench technology
High power density
Low on-resistance
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Compact SOT-23-3 package
High performance
Energy-efficient
Reliable and robust
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 47mΩ @ 3.5A, 10V
Drain Current (Id): 3.16A (Ta)
Input Capacitance (Ciss): 305pF @ 15V
Power Dissipation (Max): 750mW (Ta)
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Surface mount (SMT) compatible
Tape and reel packaging
Application Areas
Switching power supplies
Motor drives
Automotive electronics
Industrial control systems
Product Lifecycle
Currently available
No known plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High performance and efficiency
Compact and space-saving design
Wide operating temperature range
Reliable and robust construction
Suitable for a variety of power electronics applications
SI2306DS-T1-GE3Electro-Films (EFI) / Vishay