Manufacturer Part Number
SI2306BDS-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
This is a N-Channel Power MOSFET transistor from the TrenchFET series by Vishay/Siliconix.
Product Features and Performance
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Current Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Product Advantages
Low on-resistance for efficient power delivery
High current handling capability
Wide operating temperature range
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Manufacturer's packaging: SOT-23-3 (TO-236)
Compatibility
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Application Areas
Suitable for a variety of power management and control applications
Product Lifecycle
Currently in production
Replacements or upgrades available if needed
Key Reasons to Choose This Product
Excellent power efficiency and performance
Robust and reliable design
Wide operating temperature range
Easy surface mount integration