SI2304DDS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2304DDS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Single N-channel enhancement-mode power MOSFET in a SOT-23-3 (TO-236) package

Part of the TrenchFET series from Vishay/Siliconix

Product Features and Performance

30V drain-to-source voltage rating

3A (Ta) / 3.6A (Tc) continuous drain current

60mΩ maximum on-resistance at 3.2A, 10V

235pF maximum input capacitance at 15V

Suitable for switching and amplifier applications

Product Advantages

Compact SOT-23-3 (TO-236) surface-mount package

Low on-resistance for improved efficiency

Reliable TrenchFET technology

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 60mΩ @ 3.2A, 10V

Continuous Drain Current (Id): 3.3A (Ta), 3.6A (Tc)

Input Capacitance (Ciss): 235pF @ 15V

Power Dissipation: 1.1W (Ta), 1.7W (Tc)

Quality and Safety Features

RoHS3 compliant

Reliable and efficient TrenchFET technology

Compatibility

Surface-mount SOT-23-3 (TO-236) package

Application Areas

Switching and amplifier applications in electronic devices

Power management circuits

Automotive electronics

Industrial control systems

Product Lifecycle

Currently in production

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

High current capability and low on-resistance for improved efficiency

Compact and surface-mountable SOT-23-3 (TO-236) package

Reliable and proven TrenchFET technology

RoHS3 compliance for eco-friendly and regulatory-compliant applications