Manufacturer Part Number
SI2304DDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Single N-channel enhancement-mode power MOSFET in a SOT-23-3 (TO-236) package
Part of the TrenchFET series from Vishay/Siliconix
Product Features and Performance
30V drain-to-source voltage rating
3A (Ta) / 3.6A (Tc) continuous drain current
60mΩ maximum on-resistance at 3.2A, 10V
235pF maximum input capacitance at 15V
Suitable for switching and amplifier applications
Product Advantages
Compact SOT-23-3 (TO-236) surface-mount package
Low on-resistance for improved efficiency
Reliable TrenchFET technology
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 60mΩ @ 3.2A, 10V
Continuous Drain Current (Id): 3.3A (Ta), 3.6A (Tc)
Input Capacitance (Ciss): 235pF @ 15V
Power Dissipation: 1.1W (Ta), 1.7W (Tc)
Quality and Safety Features
RoHS3 compliant
Reliable and efficient TrenchFET technology
Compatibility
Surface-mount SOT-23-3 (TO-236) package
Application Areas
Switching and amplifier applications in electronic devices
Power management circuits
Automotive electronics
Industrial control systems
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High current capability and low on-resistance for improved efficiency
Compact and surface-mountable SOT-23-3 (TO-236) package
Reliable and proven TrenchFET technology
RoHS3 compliance for eco-friendly and regulatory-compliant applications
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