Manufacturer Part Number
SI2304BDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance, low-voltage, logic-level N-channel MOSFET
Product Features and Performance
Optimized for low-voltage, high-frequency switching applications
Compact surface-mount package
Low on-resistance
Low gate charge
High current capability
Wide operating temperature range
Product Advantages
Excellent power efficiency
Space-saving design
Reliable and durable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 70mΩ @ 2.5A, 10V
Continuous Drain Current (Id): 2.6A
Input Capacitance (Ciss): 225pF @ 15V
Power Dissipation (Pd): 750mW
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Battery management systems
General-purpose power management
Product Lifecycle
This product is an active and widely available part.
Replacements and upgrades may be available from Vishay/Siliconix or other manufacturers.
Key Reasons to Choose This Product
Excellent power efficiency and performance
Compact and space-saving design
Wide operating temperature range for versatile applications
Reliable and durable construction
RoHS3 compliance for environmentally friendly use