SI1539DL-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI1539DL-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

This product is a discrete semiconductor device, specifically a transistor-FET (MOSFET) array.

Product Features and Performance

N and P-Channel MOSFET configuration

30V Drain to Source Voltage (Vdss)

480mOhm maximum On-Resistance (Rds(on)) at 590mA, 10V

540mA continuous Drain Current (Id) at 25°C

4nC maximum Gate Charge (Qg) at 10V

Operating temperature range of -55°C to 150°C

Product Advantages

Logic Level Gate for easy control

MOSFET technology provides high efficiency and fast switching

Low on-resistance for reduced power loss

Wide operating temperature range

Key Technical Parameters

Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

Configuration: N and P-Channel

Drain to Source Voltage (Vdss): 30V

Rds(on) (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V

Continuous Drain Current (Id) @ 25°C: 540mA, 420mA

Vgs(th) (Max) @ Id: 2.6V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Mounting Type: Surface Mount

Package: 6-TSSOP, SC-88, SOT-363

Supplier Device Package: SC-70-6

Application Areas

Suitable for a wide range of power management and control applications

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available, but details should be confirmed with the manufacturer.

Key Reasons to Choose This Product

High efficiency and fast switching due to MOSFET technology

Low on-resistance for reduced power loss

Wide operating temperature range for versatile applications

Logic Level Gate for easy control

RoHS3 compliance for environmental responsibility