Manufacturer Part Number
SI1499DH-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This product is a discrete semiconductor device in the form of a P-channel MOSFET transistor.
Product Features and Performance
P-channel MOSFET transistor
Trench technology
Wide operating temperature range of -55°C to 150°C
Low on-resistance (RDS(on)) of 78mΩ @ 2A, 4.5V
High drain current capacity of 1.6A (Tc)
Low input capacitance of 650pF @ 4V
Maximum power dissipation of 2.5W (Ta) and 2.78W (Tc)
Product Advantages
Efficient power handling and low power losses
Compact surface mount package
Suitable for high-frequency, high-speed switching applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 8V
Gate-to-Source Voltage (VGS): ±5V
Threshold Voltage (VGS(th)): 800mV @ 250μA
Drive Voltage (Max RDS(on), Min RDS(on)): 1.2V, 4.5V
Gate Charge (Qg): 16nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
High reliability and durability
Compatibility
This MOSFET is a general-purpose device suitable for a wide range of applications.
Application Areas
Power management circuits
Switch-mode power supplies
Motor control
Battery charging circuits
General-purpose switching applications
Product Lifecycle
This product is an active and available device. No discontinuation or replacement information is currently known.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Compact surface mount package
Wide operating temperature range
Low on-resistance for low power losses
Suitable for high-frequency, high-speed switching applications
Reliable and RoHS3 compliant