IRLL110TRPBF - Vishay Siliconix

Manufacturer Part Number

IRLL110TRPBF

Manufacturer

Vishay / Siliconix

Introduction

N-Channel MOSFET Transistor

Product Features and Performance

Drain to Source Voltage (Vdss) of 100V

Vgs (Max) of ±10V

Rds On (Max) of 540mOhm @ 900mA, 5V

Continuous Drain Current (Id) of 1.5A @ 25°C

Input Capacitance (Ciss) of 250pF @ 25V

Power Dissipation of 2W (Ta), 3.1W (Tc)

Gate Charge (Qg) of 6.1nC @ 5V

Product Advantages

Low on-resistance for efficient power conversion

High voltage rating for versatile applications

Compact surface mount package

Key Technical Parameters

MOSFET (Metal Oxide) Technology

N-Channel FET Type

Vgs(th) (Max) of 2V @ 250A

Drive Voltage (Max Rds On, Min Rds On) of 4V, 5V

Operating Temperature Range of -55°C to 150°C (TJ)

Quality and Safety Features

RoHS3 Compliant

Reliable SOT-223 package

Compatibility

Surface Mount (SMT) assembly

Application Areas

Power management circuits

Motor control

Switching power supplies

Industrial and consumer electronics

Product Lifecycle

Current product, no indication of discontinuation. Replacement or upgrade options available from Vishay/Siliconix.

Key Reasons to Choose This Product

High voltage and current handling capability

Low on-resistance for efficient power conversion

Compact surface mount package for space-constrained designs

Broad operating temperature range

RoHS compliance for use in a wide range of applications

Proven reliability and quality from Vishay/Siliconix