IRLL110TRPBF-BE3 - Vishay Siliconix

Manufacturer Part Number

IRLL110TRPBF-BE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

N-Channel MOSFET

Drain to Source Voltage (Vdss): 100 V

Vgs (Max): ±10V

Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V

Current Continuous Drain (Id) @ 25°C: 1.5A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V

Power Dissipation (Max): 2W (Ta), 3.1W (Tc)

Vgs(th) (Max) @ Id: 2V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 4V, 5V

Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V

Product Advantages

High voltage capability

Low on-resistance

High current handling

Key Technical Parameters

Manufacturer's packaging: SOT-223

Package / Case: TO-261-4, TO-261AA

Package: Tape & Reel (TR)

Operating Temperature: -55°C ~ 150°C (TJ)

Technology: MOSFET (Metal Oxide)

Mounting Type: Surface Mount

Quality and Safety Features

Robust construction

Reliable performance

Compatibility

Suitable for a wide range of electronic applications

Application Areas

Power supplies

Motor drives

Switching circuits

Product Lifecycle

Readily available

No plans for discontinuation

Key Reasons to Choose This Product

High voltage and current handling capability

Low on-resistance for efficient power conversion

Robust and reliable design for long-term use

Compatibility with a wide range of electronic applications